Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors
نویسندگان
چکیده
منابع مشابه
Correlating gate sinking and electrical performance of pseudomorphic high electron mobility transistors
Ti interdiffusion from the Ti/Pt/Au gate into the AlGaAs Schottky barrier layer (SBL) of 0.25-lm GaAs Pseudomorphic High Electron Mobility Transistors (PHEMTs) has been studied using the accelerated life testing technique. Based on measurements and modeling, analytical expressions for quantitative correlation between the positive pinch-off voltage (VP) shift as well as the saturation drain curr...
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ژورنال
عنوان ژورنال: IEICE Electronics Express
سال: 2004
ISSN: 1349-2543
DOI: 10.1587/elex.1.292